SI2312CDS features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? dc/dc converters ? load switch for portable applications product summary v ds (v) r ds(on) ( ) i d (a) e q g (typ.) 20 0.0318 at v gs = 4.5 v 6 a 8.8 nc 0.0356 at v gs = 2.5 v 6 a 0.0414 at v gs = 1.8 v 5.6 marking code p5 xxx lot tracea b ility and date code part # code orderin g information: SI2312CDS-t1-ge3 (lead (p b )-free and halogen-free) n -channel mosfet g d s g s d top v ie w 2 3 sot-23 1 notes: a. package limited b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 125 c/w. e. based on t c = 25 c. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d 6 a a t c = 70 c 5.1 t a = 25 c 5 b, c t a = 70 c 4 b, c pulsed drain current i dm 20 continuous source-drain diode current t c = 25 c i s 1.75 t a = 25 c 1.04 b, c maximum power dissipation t c = 25 c p d 2.1 w t c = 70 c 1.3 t a = 25 c 1.25 b, c t a = 70 c 0.8 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t 5 s r thja 80 100 c/w maximum junction-to-foot (drain) steady state r thjf 40 60 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com vishay siliconix SI2312CDS document number: 65900 s10-0641-rev. a, 22-mar-10 www.vishay.com 1 new product n-channel 20 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? dc/dc converters ? load switch for portable applications product summary v ds (v) r ds(on) ( : ) i d (a) e q g (typ.) 20 0.0318 at v gs = 4.5 v 6 a 8.8 nc 0.0356 at v gs = 2.5 v 6 a 0.0414 at v gs = 1.8 v 5.6 marking code p5 xxx lot tracea b ility and date code part # code orderin g information: SI2312CDS-t1-ge3 (lead (p b )-free and halogen-free) n -channel mosfet g d s g s d top v ie w 2 3 sot-23 1 notes: a. package limited b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 125 c/w. e. based on t c = 25 c. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d 6 a a t c = 70 c 5.1 t a = 25 c 5 b, c t a = 70 c 4 b, c pulsed drain current i dm 20 continuous source-drain diode current t c = 25 c i s 1.75 t a = 25 c 1.04 b, c maximum power dissipation t c = 25 c p d 2.1 w t c = 70 c 1.3 t a = 25 c 1.25 b, c t a = 70 c 0.8 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t d 5 s r thja 80 100 c/w maximum junction-to-foot (drain) steady state r thjf 40 60
notes: a. pulse test; pulse width 300 s, duty cycle 2 % b. guaranteed by design, not s ubject to production testing. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 20 v v ds temperature coefficient v ds /t j i d = 250 a 25 mv/c v gs(th) temperature coefficient v gs(th) /t j - 2.6 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.45 1.0 v gate-source leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a v ds = 20 v, v gs = 0 v, t j = 70 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 4.5 v 20 a drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 5.0 a 0.0265 0.0318 v gs = 2.5 v, i d = 4.7 a 0.0296 0.0356 v gs = 1.8 v, i d = 4.3 a 0.0345 0.0414 forward transconductance a g fs v ds = 10 v, i d = 5.0 a 24 s dynamic b input capacitance c iss v ds = 10 v, v gs = 0 v, f = 1 mhz 865 pf output capacitance c oss 105 reverse transfer capacitance c rss 55 total gate charge q g v ds = 10 v, v gs = 5 v, i d = 5.0 a 12 18 nc v ds = 10 v, v gs = 4.5 v, i d = 5.0 a 8.8 14 gate-source charge q gs 1.1 gate-drain charge q gd 0.7 gate resistance r g f = 1 mhz 0.5 2.4 4.8 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 2.2 i d ? 4 a, v gen = 4.5 v, r g = 1 816 ns rise time t r 17 26 turn-off delay time t d(off) 31 47 fall time t f 816 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 2.2 i d ? 4 a, v gen = 5 v, r g = 1 510 rise time t r 13 20 turn-off delay time t d(off) 21 32 fall time t f 612 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 1.75 a pulse diode forward current i sm 20 body diode voltage v sd i s = 4 a, v gs = 0 v 0.75 1.2 v body diode reverse recovery time t rr i f = 4 a, di/dt = 100 a/s, t j = 25 c 12 20 ns body diode reverse recovery charge q rr 510nc reverse recovery fall time t a 7 ns reverse recovery rise time t b 5 SI2312CDS product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com www.vishay.com 2 document number: 65900 s10-0641-rev. a, 22-mar-10 vishay siliconix SI2312CDS new product notes: a. pulse test; pulse width d 300 s, duty cycle d 2 % b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 20 v v ds temperature coefficient ' v ds /t j i d = 250 a 25 mv/c v gs(th) temperature coefficient ' v gs(th) /t j - 2.6 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.45 1.0 v gate-source leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a v ds = 20 v, v gs = 0 v, t j = 70 c 10 on-state drain current a i d(on) v ds d 5 v, v gs = 4.5 v 20 a drain-source on-state resistance a r ds(on) v gs 4.5 v, i d = 5.0 a 0.0265 0.0318 : v gs 2.5 v, i d = 4.7 a 0.0296 0.0356 v gs 1.8 v, i d = 4.3 a 0.0345 0.0414 forward transconductance a g fs v ds = 10 v, i d = 5.0 a 24 s dynamic b input capacitance c iss v ds = 10 v, v gs = 0 v, f = 1 mhz 865 pf output capacitance c oss 105 reverse transfer capacitance c rss 55 total gate charge q g v ds = 10 v, v gs = 5 v, i d = 5.0 a 12 18 nc v ds = 10 v, v gs = 4.5 v, i d = 5.0 a 8.8 14 gate-source charge q gs 1.1 gate-drain charge q gd 0.7 gate resistance r g f = 1 mhz 0.5 2.4 4.8 : tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 2.2 : i d # 4 a, v gen = 4.5 v, r g = 1 : 816 ns rise time t r 17 26 turn-off delay time t d(off) 31 47 fall time t f 816 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 2.2 : i d # 4 a, v gen = 5 v, r g = 1 : 510 rise time t r 13 20 turn-off delay time t d(off) 21 32 fall time t f 612 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 1.75 a pulse diode forward current i sm 20 body diode voltage v sd i s = 4 a, v gs 0 v 0.75 1.2 v body diode reverse recovery time t rr i f = 4 a, di/dt = 100 a/s, t j = 25 c 12 20 ns body diode reverse recovery charge q rr 510nc reverse recovery fall time t a 7 ns reverse recovery rise time t b 5
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